发明名称 SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce a voltage drop amount in reverse direction operation while maintaining high breakdown strength characteristic and current amplification rate. SOLUTION: An emitter region 6 has a region A which is not covered with a base region 4 to be in contact with a collector region 3 without the base region 4. Consequently, in reverse direction operation, a reflow current flows between the collector region 3 and the emitter region 6 before a pn diode between the collector region 3 and the base region 4 turns "on", thus reducing the voltage drop amount. Furthermore, when a voltage between the collector region 3 and the emitter region 6 is lower than a content potential of the pn diode between the collector region 3 and the base region 4, an electronic current which is a majority carrier flows between the collector region 3 and the emitter region 6, and thereby reverse recovery characteristic in cutoff of reverse direction operation becomes good. Loss in reverse recovery can be thereby reduced. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006066781(A) 申请公布日期 2006.03.09
申请号 JP20040249972 申请日期 2004.08.30
申请人 NISSAN MOTOR CO LTD 发明人 HAYASHI TETSUYA;HOSHI MASAKATSU;TANAKA HIDEAKI
分类号 H01L21/331;H01L29/732 主分类号 H01L21/331
代理机构 代理人
主权项
地址