PRODUCTION METHOD FOR SEMICONDUCTOR LIGHT EMITTINGT ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A periodic structure A1 formed with a cycle up to two times the average optical wavelength of light is formed on the light pick-up surface of a semiconductor light emitting element (10) to thereby reduce a difference in refractive index on the light pick-up surface. Therefore, reflection off a light pick-up surface can be prevented, and a high light pick-up efficiency can be realized. In addition, since fine periodic mask can be formed by heating an Au thin film, the periodic structure A1 can be formed simply and at low costs.