发明名称 |
PHASE SHIFT MASK AND EXPOSURE METHOD USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase shift mask for achieving a large depth of focus when a transparent insulating substrate is exposed to transfer a fine line-and-space pattern. <P>SOLUTION: The purpose of the phase shift mask is to transfer a line-and-space pattern by an actual size projection exposure using a mask pattern having a phase shifter 11 which inverts the phase of light but without using a light shielding film. When the line-and-space pattern has 0.5 μm to 0.8 μm line width L and 2L pitch, the mask pattern consists of linear phase shifters 11 arranged in parallel to each other with 0.5L to 0.75L width W and 2L pitch P. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006064968(A) |
申请公布日期 |
2006.03.09 |
申请号 |
JP20040246897 |
申请日期 |
2004.08.26 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD |
发明人 |
YAMAGUCHI HIROTAKA |
分类号 |
G03F1/34;G03F1/68;G03F7/20;H01L21/027 |
主分类号 |
G03F1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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