发明名称 METHOD OF PERFORMING RESIST PROCESS CALIBRATION/OPTIMIZATION AND DOE OPTIMIZATION FOR PROVIDING OPE MATCHING BETWEEN DIFFERENT LITHOGRAPHY SYSTEMS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of optimizing a process for use with a plurality of lithography systems. <P>SOLUTION: The method includes a step of determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system, a step of selecting a second lithography system configured with a diffracting optical element having variable parameters for optimizing the performance, a step of simulating the imaging performance of the second lithography system utilizing diffracting optical elements, the calibrated resist model and the target pattern, and a step of optimizing the imaging performance of the diffractive optical element by executing a genetic algorithm. The genetic algorithm identifies the values of the parameter of the diffractive optical element that optimizes the imaging of the target pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006066925(A) 申请公布日期 2006.03.09
申请号 JP20050276673 申请日期 2005.08.25
申请人 ASML MASKTOOLS BV 发明人 PARK SANGBONG;CHEN JANG FUNG;LIEBCHEN ARMIN
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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