| 发明名称 |
PEELING METHOD FOR THIN FILM IC, AND FORMATION METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a peeling method for a low-cost and production-efficient thin-film IC, and formation method for an IC chip using the foregoing peeling method. <P>SOLUTION: A release layer consisting of a film containing metal is formed on a substrate. Then, a plurality of thin-film ICs are formed on the release layer, and resin films are formed on each of the plurality of thin-film ICs. After that, the release layer is removed by introducing gas or liquid containing halogen fluorinated to perform peeling for the substrate and thin-film ICs. Meanwhile, the thin-film IC that has been peeled is formed into an IC chip by sealing with laminated materials and the like. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006066906(A) |
申请公布日期 |
2006.03.09 |
| 申请号 |
JP20050220262 |
申请日期 |
2005.07.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TAMURA TOMOKO;SUGIYAMA EIJI;MICHIMAE YOSHITAKA;ORIKI KOJI;TSURUME TAKUYA |
| 分类号 |
H01L27/12;G06K19/07;G06K19/077;H01L21/02;H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L27/12 |
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