| 摘要 |
PROBLEM TO BE SOLVED: To provide a very fine SOI-MOS transistor and a method of manufacturing it. SOLUTION: A support substrate 1 is sequentially coated with a thick oxide film 2, a semiconductor film 31 insulated from outside, and a thin oxide film 21 and a thin SOI layer 3 which act as a diffusion prevention insulating film. In the SOI layer 3, drain diffusion layers 9 and 10 and source diffusion layers 8 and 11 of the MOS transistor are formed. In the thin oxide film 21 below a channel of the MOS transistor, a heavily doped region 38 which has the same conductivity type as the channel is formed. A short channel effect of the MOS transistor is restrained to improve source-drain breakdown voltage and to decrease drain junction capacitance. Thereby, very fine MOS transistor can be formed in the SOI layer. COPYRIGHT: (C)2006,JPO&NCIPI
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