| 摘要 |
PROBLEM TO BE SOLVED: To provide a MIS transistor having high switching characteristics by reducing switching charge (Q<SB>sw</SB>) between a gate and a drain while suppressing on-resistance (R<SB>on</SB>). SOLUTION: The MIS transistor comprises a drain layer 20, a base layer 30 which has a channel end 30a and is laminated on the drain layer 20, a source layer 40 which has a source end 40a connected with the channel end 30a and is laminated on the base layer 30, a gate insulating film 700 which is formed continuously along the channel end 30a and the source end 40a, a gate electrode 80 which is provided opposite to the channel end 30a across the gate insulating film 700, and a cavity 750 which is formed on the drain layer 20 below the gate electrode 80 and opposed to the gate electrode 80. COPYRIGHT: (C)2006,JPO&NCIPI
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