| 摘要 |
PROBLEM TO BE SOLVED: To form a field plate while the restriction of the disposition of the field plate is alleviated. SOLUTION: A method of manufacturing a semiconductor device includes the steps of: sequentially forming an insulating layer 102, a semiconductor layer 103, an insulating layer 104 and a semiconductor layer 105 on a semiconductor substrate 101; arranging a gate electrode 107 on the semiconductor layer 105; forming a source layer 109a and a drain layer 109b in the semiconductor layer 105, forming a field effect transistor in the semiconductor layer 105; and connecting the gate electrode 107 to the semiconductor layer 103 through a contact region C1, thereby arranging the field plate on the rear surface side of the semiconductor layer 105. COPYRIGHT: (C)2006,JPO&NCIPI
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