| 摘要 |
PROBLEM TO BE SOLVED: To further miniaturize an image reading device having an amorphous silicon thin-film transistor, and to provide a polysilicon thin-film transistor. SOLUTION: A photoelectric conversion type thin-film transistor 3 having a semiconductor thin film 41 made of an amorphous silicon is provided at an upper layer side rather than CMOS thin-film transistors 21 and 22 for a drive circuit, having semiconductor thin films 25 and 26 made of a polysilicon. In this case, upper layer connecting wiring 48, 51, 54 for connecting the bottom gate electrode 9, source/drain electrodes 10 and a top gate electrode 8 of the thin-film transistor 3 to the conductor layers 35 and 36 connected to the source/drain electrodes of the thin-film transistors 21 and 22 are formed of the same conductive material in the same layer as the respective electrodes of the bottom gate electrode 9, the source/drain electrodes 10 and the top gate electrode 8. The lower layer connecting wiring 50, 53, 56 are formed of the same conductive material in the same layer as the conductor layers 35 and 36. COPYRIGHT: (C)2006,JPO&NCIPI
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