| 摘要 |
In a capacitance type semiconductor dynamic quantity sensor, a sensor chip and a circuit are connected to each other through adhesive film having an elasticity of 200 MPa or less to reduce the temperature characteristic. Four bonding wires for connecting the sensor chip and the circuit chip are arranged so that each of the bonding wires is located at the center portion of each side portion of the sensor chip or at each corner portion of the sensor chip, thereby sufficiently increasing the interval between the bonding wires and thus sufficiently reducing the absolute value of the parasitic capacitance thus occurring. Therefore, even when the parasitic capacitance between the four bonding wires is varied, the variation is very small, and thus the influence on the sensor characteristic can be reduced.
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