Manufacture of insulated gate type field effect transistor

摘要

After a field insulating film having an element opening is formed on the surface of a p-type well, a gate insulating film is formed on a semiconductor surface in the element opening. A gate electrode layer of polysilicon or the like is formed on the insulating film. By using as a mask a lamination of the electrode layer and gate insulating film and the field insulating film, an ion implantation process is executed to form n⁺-type source and drain regions. After the electrode layer is made narrow and thin by an isotropic etching process, n^--type source and drain regions are formed by an ion implantation process using as a mask the lamination of the electrode layer and gate insulating film and the field insulating film.