发明名称 |
Enhanced raman amplification and lasing in silicon-based photonic crystals |
摘要 |
Tunable laser devices and methods of manufacturing such devices are disclosed. air-holes with defects that form an optical waveguide. The waveguide has a cross-sectional area whose dimensions are in sub-wavelength ranges, wherein the cross-sectional area is perpendicular to the propagation direction of light in the waveguide. The waveguide receives pump light and outputs Stokes light through Raman scattering. The laser device may include a photonic crystal made from silicon having air-holes with defects forming a pair of optically coupled cavities. The geometries of the cavities can be substantially identical to each other. The cavities are defined to cause a frequency-splitting difference between a frequency of pump light and a frequency of Stokes light to correspond to an optical phonon frequency in silicon through Raman scattering.
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申请公布号 |
US2006050744(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20050185031 |
申请日期 |
2005.07.20 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
WONG CHEE W.;YANG XIADONG |
分类号 |
H01S3/30;H01S5/00 |
主分类号 |
H01S3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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