VERSATILE SYSTEM FOR TRIPLE-GATED TRANSISTORS WITH ENGINEERED CORNERS
摘要
<p>A system is provided for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) separated by a channel region (306). A removable form structure (308) is formed atop the isolation regions to define an area over the channel region within which a channel body structure (316) is formed. The form structure (308) is then removed. Channel body structure (316) has blunted corners or edges (3,18).</p>
申请公布号
WO2006026701(A2)
申请公布日期
2006.03.09
申请号
WO2005US31096
申请日期
2005.08.31
申请人
TEXAS INSTRUMENTS INCORPORATED;VISOKAY, MARK, R.;CHAMBERS, JAMES, J.