| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory in which the shift amount of a hysteresis curve becomes small even if a floating charge remains in a ferroelectric capacitor. SOLUTION: A first interlayer insulating film 20 is deposited on a semiconductor substrate 10 in which a MOSFET is formed, and the ferroelectric capacitor 49 is formed on the first interlayer insulating film. Then, after a first opening 50 for a lower electrode contact is formed in the ferroelectric thin film 46, a first recovery anneal is performed at a first structure 100 having the semiconductor substrate, the first interlayer insulating film, and the ferroelectric capacitor. Then, after a second interlayer insulating film 60 is formed on the first interlayer insulating film of the first structure so as to embed the ferroelectric capacitor, a second opening 52 is provided in the second interlayer insulating film by etching. Then, second recovery annealing is sequentially performed to the first structure and the second structure 102 having the second interlayer insulating film in a nitrogen atmosphere, an oxygen atmosphere and a nitrogen atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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