| 摘要 |
A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4 a, a capacitor dielectric film 5 a and a top electrode 6 a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5 a is composed of a material with the formula (Ba<SUB>1-y</SUB>,Sr<SUB>y</SUB>)<SUB>m</SUB>Y<SUB>p</SUB>Ti<SUB>Q</SUB>O<SUB>3+delta</SUB>, where 0<p/(p+m+Q)<=0.015, -0.5<delta<0.5.
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