发明名称 |
Wafer bevel polymer removal |
摘要 |
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber. |
申请公布号 |
US2006051967(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20040934081 |
申请日期 |
2004.09.03 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
CHANG JEREMY;FISCHER ANDREAS;LOEWENHARDT PETER |
分类号 |
H01L21/302;B44C1/22;C23F1/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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