发明名称 SEMICONDUCTOR MEMORY DEVICE, ITS ACCESS METHOD, AND MEMORY CONTROL SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which even if the inexpensive semiconductor memory of a block access type is used for a storage medium, this can be treated as a normal system memory which can be accessed at random, and its access method and a memory control system. <P>SOLUTION: This semiconductor memory device 19a is provided with a NAND type flash memory 17a as a first semiconductor memory and an SRAM 18a as a second semiconductor memory, wherein the SRAM 18a is the cache of the flash memory 17a, and the flash memory 17a is accessed through the SRAM 18a. A first address region and a second address region are arranged in a logical memory address to be accessed from the outside, and a portion of the SRAM 18a is mapped in the first address region. Also, a control circuit 16a controls data transfer between the flash memory 17a and the SRAM 18a by carrying out memory-accessing of the second address region. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006065533(A) 申请公布日期 2006.03.09
申请号 JP20040246249 申请日期 2004.08.26
申请人 SONY CORP 发明人 NISHIHARA TOSHIYUKI;YAMANAKA HIDETOSHI;YOSHIOKA DAISUKE
分类号 G06F12/08;G06F3/06;G11C16/02 主分类号 G06F12/08
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