发明名称 WIRING PATTERN FORMING METHOD AND TFT GATE ELECTRODE FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To form a conductive material layer in areas having a width smaller than that of a droplet without dropping the droplet on the areas. SOLUTION: In forming a wiring pattern, a first area has a first width, and second areas has a second width smaller than the first one. A method for forming the wiring pattern includes a step (A) of dropping a droplet having a diameter smaller than the first width and larger than second width onto the first area to form the conductive material layer covering both first and second areas. The step (A) includes a step (a1) of dropping the droplet to make it land at the position that face the boundary between the first area and the second area. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006066673(A) 申请公布日期 2006.03.09
申请号 JP20040247908 申请日期 2004.08.27
申请人 SEIKO EPSON CORP 发明人 HIRAI TOSHIMITSU;SAKAI MARI
分类号 H05K3/10;B05D1/26;B05D5/12;H01L21/288;H01L21/3205;H01L29/423;H01L29/49;H01L29/786 主分类号 H05K3/10
代理机构 代理人
主权项
地址