METHOD OF FORMING SILICON OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a silicon oxide film which can be formed at a low temperature, exhibits a high degree of surface flatness, excellent concave embedding, and step coverage properties; and can be formed at a high speed. SOLUTION: A first source gas containing silicon atoms is supplied to a treatment chamber 52 and an amorphous silicon film of several atom layers is formed on a wafer 200. Supply of the first source gas is stopped and the first source gas is discharged from the treatment chamber 52. A second source gas containing oxygen atoms is supplied to the treatment chamber 52 and is allowed to react with the amorphous silicon film formed on the wafer 1 to form a silicon oxide film. Supply of the second source gas is stopped and the second source gas is discharged from the treatment chamber 52. COPYRIGHT: (C)2006,JPO&NCIPI