发明名称 |
BIMORPH ELEMENT, BIMORPH SWITCH, MIRROR ELEMENT, AND PROCESS FOR PRODUCING THEM |
摘要 |
<p>This invention provides a bimorph element comprising a silicon oxide layer, a higher-expansion coefficient layer provided on the silicon oxide layer and having a higher coefficient of thermal expansion than the silicon oxide layer, and a deformation preventive film covering the surface of the silicon oxide layer and capable of preventing the deformation of the silicon oxide layer with the elapse of time. The deformation preventive film may have lower water content and oxygen permeability than the silicon oxide layer and may be silicon oxide in a film form formed at a higher energy than that in the formation of the silicon oxide layer, may be a silicon nitride film, or may be a metal film.</p> |
申请公布号 |
WO2006025456(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
WO2005JP15928 |
申请日期 |
2005.08.31 |
申请人 |
ADVANTEST CORPORATION;TAKAYANAGI, FUMIKAZU;SANPEI, HIROKAZU |
发明人 |
TAKAYANAGI, FUMIKAZU;SANPEI, HIROKAZU |
分类号 |
H01H61/01;B81B3/00;G02B26/08;H01H37/14;H01H37/52;H01H61/013 |
主分类号 |
H01H61/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|