发明名称 SiO DEPOSITION MATERIAL, Si POWDER FOR SiO RAW MATERIAL, AND METHOD FOR PRODUCING SiO
摘要 <p>Disclosed is SiO or an SiO deposition material characterized by having a hydrogen gas content of not less than 120 ppm. Also disclosed is an SiO deposition material characterized by having a hydrogen gas content of not less than 150 ppm. By using such materials, the film forming rate can be increased when SiO is deposited on a base, thereby efficiently forming an SiO deposited film. By setting the hydrogen gas content of a raw material Si powder to 30 ppm or higher, the sublimation rate can be increased when SiO is produced, thereby efficiently producing it at low cost. Consequently, this method for producing SiO can be widely applied to methods for producing deposition materials for packaging materials having transparency and barrier properties which are used for foods, medical products, medicinal products and the like, and methods for producing deposition materials for electrode materials of lithium batteries having an SiO deposited film.</p>
申请公布号 WO2006025194(A1) 申请公布日期 2006.03.09
申请号 WO2005JP14552 申请日期 2005.08.09
申请人 SUMITOMO TITANIUM CORPORATION;KIZAKI, SHINGO;NISHIOKA, KAZUO 发明人 KIZAKI, SHINGO;NISHIOKA, KAZUO
分类号 C01B33/113;C23C14/24 主分类号 C01B33/113
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