| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can simplify a manufacturing process when a gate electrode is formed, while suppressing depletion of the gate electrode. SOLUTION: The semiconductor device includes a pair of n-type source/drain regions 6a, a gate electrode 8a formed on a channel region 5a with a gate insulating film 7a disposed therebetween, a pair of p-type source/drain regions 6b, and a gate electrode 8b formed on a channel region 5b with a gate insulating film 7b disposed therebetween. The gate electrode 8a includes a TaN layer 9a formed on the gate insulating film 7a, and a polysilicon layer 10a formed on the TaN layer 9a. The gate electrode 8b includes a TaN layer 9b formed on the gate insulating film 7b, and a polysilicon layer 10b formed on the TaN layer 9b. The TaN layers 9a and 9b form an identical layer. COPYRIGHT: (C)2006,JPO&NCIPI
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