HIGH DIELECTRIC FILM, METHOD FOR MANUFACTURING THE SAME FIELD EFFECT TRANSISTOR USING THE SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce interface level density on an interface between a silicon substrate and a gate insulating film, and to improve the mobility of a carrier on the gate insulating film in a field effect transistor provided with the gate insulating film, consisting of a high dielectric film containing hafnium. SOLUTION: A second insulating film 8, having a high dielectric constant and obtained by containing deuterium in a thin film containing hafnium such as HfSiON or HfAlOxat a ratio larger than the ratio of deuterium existing in nature to hydrogen, is used as the gate insulating film of the field effect transistor. The second insulating film 8 is preferably formed by ALD method. COPYRIGHT: (C)2006,JPO&NCIPI