| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing epitaxial silicon wafer by which heat treatment is performed for forming an oxygen precipitating nucleus in an oxidizing atmosphere, the final residual thickness of the silicon oxide film formed during the heat treatment can be retained to the level of a natural oxide film without performing any cleaning with a hydrofluoric acid, and, in addition, the increase of particles can be suppressed after cleaning. SOLUTION: The method of manufacturing epitaxial silicon wafer includes a vapor-phase growing step of vapor-phase growing an epitaxial silicon layer 2 on a single-crystal silicon substrate 1 manufactured by the CZ method and doped with boron, so that the electrical resistivity of the substrate 1 may become≤0.02Ωcm; and a low-temperature heat-treating step of forming the oxygen precipitating nucleus 11 in the single-crystal silicon substrate 1, by performing heat treatment within the temperature range of 450-750°C in an oxidizing atmosphere for the time, during which the thickness t1 of a silicon oxide film 3 formed on the epitaxial silicon layer 2 becomes≤2 nm. The method also includes a cleaning step of etching the silicon oxide film 3 formed in the low-temperature heat-treating step with a cleaning liquid composed of the mixed liquid of ammonia, hydrogen peroxide, and water as the first cleaning after the low-temperature heat-treating step. These steps are performed in the described order. COPYRIGHT: (C)2006,JPO&NCIPI
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