| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transistor which is capable of keeping superior transistor characteristics without complicating manufacturing steps, and further is capable of being small-sized. <P>SOLUTION: In a transistor (1), a base electrode (15) and an emitter electrode (17) are mutually separately formed within the same plane, a plurality of emitter regions (13) are approximately equally distributively disposed, and a base bonding pad region (18) and an emitter bonding pad region (19) are provided, respectively, as wire bonding regions in the base electrode (15) and the emitter electrode (17). Right under the base bonding pad region (18) and the emitter bonding pad region (19), bonding spots of a part of the plurality of emitter regions (13) and a base layer 12 are disposed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
