| 摘要 |
PURPOSE:To provide a manufacturing method of a semiconductor device being to generate no leakage between bump electrodes besides capable of making sure contact without causing faulty contact between the bump electrodes and the ILB electrodes. CONSTITUTION:A first bump electrode 7 is made a plated electrode while having a second mask pattern 9 as a mask, a second bump electrode 10 having a smaller width than that of the first bump electrode 7 is formed on the first bump electrode 7 so as to plug up the inside of a second opening part 9a by plating and to remove the first and second mask pattern 8, 9 further to overall form sensitive polyimide 11 followed by plugging up the intervals of the first bump electrodes 7 by exposure and development. Further, sensitive polyimide 11 is patterned so as to remain on the first bump electrodes 7 between the second bump electrodes 10, next, sensitive polyimide 11 is subjected to heat treatment for being thermocontracted so that the surface of sensitive polyimide 11 may come between the surfaces of the first bump electrodes 7 and the surfaces of the second bump electrodes 10. |
