| 摘要 |
<p>An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device; the Schottky barrier diode includes a lightly doped p-well (20) as guard ring while the low voltage devices are built using standard, more heavily doped p-wells (22). In one embodiment, the lightly doped p-well and the standard p-well are formed by performing ion implantation using a first dose to form the lightly doped p-well, masking the lightly doped p-well, and performing ion implantation using a second dose to form the standard p-well. The second dose is the difference of the dopant concentrations of the lightly doped p-well and the standard p-well. In other embodiments, other high voltage devices can also be build by incorporating the lightly doped p-well structure.
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