| 摘要 |
<p>An integrated capacitor having a variable capacitance and being formed in an SOI substrate, comprises a first region (12) lightly doped to a first doping type (P), a second region (13) doped to a second doping type (N+) opposite to the first doping type, and located at a first side of the first region, a third region (14) doped to the first doping type (P+) and located at a second side of the first region, which is opposite to the first side, an insulating region (15) on top of the first region, and a fourth doped region (16) located on top of the insulating region (15). The second and fourth doped regions are connected to a first electrode (17), and the third region is connected to a second electrode (18). The fourth doped region (16) is laterally separated from the third region (14) by a distance (d) to increase the range of the variable capacitance.</p> |
