| 摘要 |
The method reduces defects on the cleavages of semiconductor laser diodes caused by oxygen, moisture, and heat. The method comprises (A) depositing one out of B2O3, H3BO3, Al and Mo on electrodes (7,8); (B) making chip bars by cleaving wafers; (C) depositing protective dielectric layers (10) on the cleavages in the chip sections; (D) removing both the deposited layer (9) on the electrodes and protective dielectric layers (10).
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