METHOD OF MANUFACTURING METAL ELECTRODE OF SEMICONDUCTOR

摘要

The method improves the step coverage of the later deposited layer by making the isolated layer flat. The method comprises the steps of: (A) depositing metal with thickness of d1 on an isolating substrate (1) and forming the first metal layer (11) after patterning; (B) forming the second metal layer (12) with d2 thickness on the first metal layer; (C) anodic oxidizing the second metal layer (12) except the bottom of photoresist (13).