COMPOUND SEMICONDUCATOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The method is useful to manufacture laser diodes, monitoring photodiodes, and receiving photodiodes on the same substrate. The method comprises (A) forming a p-type clad layer (23) on a p-type semiconductor substrate and a p-type or n-type active region (25); (B) forming an n-type clad layer (27) and an n-type cap layer (29) using LPE and MBE; (C) forming an n-type electrode (31) on the cap layer (29) and a p-type electrode (33) beneath the substrate; (D) forming a photo-mask pattern on the n-type electrode; (E) ion beam etching of the substrate to the desired depth perpendicular to the substrate.