发明名称 THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS
摘要 A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.
申请公布号 KR20060021891(A) 申请公布日期 2006.03.08
申请号 KR20057023949 申请日期 2004.06.18
申请人 AXCELIS TECHNOLOGIES, INC. 发明人 BENVENISTE VICTOR;DEVERGILIO WILLIAM;VANDERBERG BO
分类号 H05H1/24;H01J37/02;H01J37/317 主分类号 H05H1/24
代理机构 代理人
主权项
地址