Capacitor electrode for a ferroelectric memory cell and method for fabricating the same

摘要

A semiconductor memory device comprises an interlayer insulating film (14) formed on a semiconductor substrate; a contact plug (15) formed to extend through the interlayer insulating film; and a capacitor formed on the interlayer insulating film, an electrode (16) of the capacitor being connected with the contact plug, wherein the electrode has an iridium oxide film (16b) as an oxygen barrier film, and the iridium oxide film has a plurality of layers different in average crystal grain size from each other.