| 发明名称 |
Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
| 摘要 |
A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe<SUB>2</SUB>)<SUB>4</SUB>, as the precursor.
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| 申请公布号 |
US7009298(B2) |
申请公布日期 |
2006.03.07 |
| 申请号 |
US20030639120 |
申请日期 |
2003.08.11 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;DOAN TRUNG T.;LOWREY TYLER A. |
| 分类号 |
H01L21/302;C23C16/34;H01L21/285;H01L21/768 |
主分类号 |
H01L21/302 |
| 代理机构 |
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