发明名称 |
Protective metal structure and method to protect low-K dielectric layer during fuse blow process |
摘要 |
A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two metal fuse interconnect structures and a guard ring comprising a metal interconnect structure surrounding the fuse portion in an uppermost IMD layer comprising a dielectric constant of less than about 3.2; forming a protective metal portion electrically isolated in the uppermost IMD layer to cover at least a portion of an area extending between the fuse portions; forming at least one overlying dielectric insulating layer over the uppermost layer to include extended portions of the fuse portion and the guard ring; and, forming a metal fuse link portion to electrically interconnect the fuse portion wherein the fuse portion overlies at least a portion of the protective metal portion.
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申请公布号 |
US7009222(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20040831008 |
申请日期 |
2004.04.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YANG CHAO-HSIANG |
分类号 |
H01L31/111;H01L21/44;H01L23/525 |
主分类号 |
H01L31/111 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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