发明名称 Protective metal structure and method to protect low-K dielectric layer during fuse blow process
摘要 A method to protect a low-K IMD layer underlying a fuse link during a fuse blowing process including a guarded fuse and method for forming the same including forming a fuse portion comprising two metal fuse interconnect structures and a guard ring comprising a metal interconnect structure surrounding the fuse portion in an uppermost IMD layer comprising a dielectric constant of less than about 3.2; forming a protective metal portion electrically isolated in the uppermost IMD layer to cover at least a portion of an area extending between the fuse portions; forming at least one overlying dielectric insulating layer over the uppermost layer to include extended portions of the fuse portion and the guard ring; and, forming a metal fuse link portion to electrically interconnect the fuse portion wherein the fuse portion overlies at least a portion of the protective metal portion.
申请公布号 US7009222(B2) 申请公布日期 2006.03.07
申请号 US20040831008 申请日期 2004.04.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 YANG CHAO-HSIANG
分类号 H01L31/111;H01L21/44;H01L23/525 主分类号 H01L31/111
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