发明名称 |
Damascene process for a T-shaped gate electrode |
摘要 |
A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. The second trench can have a larger width than the trench in the silicon rich nitride layer or SiON layer. A gate conductor material, such as polysilicon, can be provided in the first trench and/or the second trench.
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申请公布号 |
US7008832(B1) |
申请公布日期 |
2006.03.07 |
申请号 |
US20010900986 |
申请日期 |
2001.07.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SUBRAMANIAN RAMKUMAR;LYONS CHRISTOPHER F.;PLAT MARINA V.;SINGH BHANWAR |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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