发明名称 Gray scale x-ray mask
摘要 The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.
申请公布号 US7008737(B2) 申请公布日期 2006.03.07
申请号 US20040804771 申请日期 2004.03.19
申请人 SANDIA NATIONAL LABORATORIES 发明人 MORALES ALFREDO M.;GONZALES MARCELA
分类号 G03F7/20;B29C33/38;B29C33/42;G03F1/14;G03F7/00;G03F9/00 主分类号 G03F7/20
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