发明名称 DOUBLE-GATE TRANSISTOR WITH ENHANCED CARRIER MOBILITY
摘要 There is disclosed an apparatus including a straining substrate (150), a device over the substrate including a channel (594, 494), wherein the straining substrate strains the device in a direction substantially perpendicular to a direction of current flow in the channel.
申请公布号 KR20060021386(A) 申请公布日期 2006.03.07
申请号 KR20057024288 申请日期 2005.12.16
申请人 INTEL CORPORATION 发明人 BOYANOV BOYAN;DOYLE BRIAN;KAVALIEROS JACK;MURTHY ANAND;CHAU ROBERT
分类号 H01L21/336;H01L29/10;H01L29/78 主分类号 H01L21/336
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