| 发明名称 |
Method to provide a triple well in an epitaxially based CMOS or BiCMOS process |
| 摘要 |
A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.
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| 申请公布号 |
US7008836(B2) |
申请公布日期 |
2006.03.07 |
| 申请号 |
US20040810124 |
申请日期 |
2004.03.26 |
| 申请人 |
INFINEON TECHNOLOGIES WIRELESS SOLUTIONS SWEDEN AB |
发明人 |
ALGOTSSON PATRIK;ANDERSSON KARIN;NORSTROEM HANS |
| 分类号 |
H01L21/8238;H01L21/8249;H01L27/092 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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