FLASH MEMORY DEVICE USING A SEMICONDUCTOR FIN AND METHOD FOR FABRICATING THE SAME
摘要
<p>A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.</p>
申请公布号
KR20060020938(A)
申请公布日期
2006.03.07
申请号
KR20040069666
申请日期
2004.09.01
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JI HOON;YOON, SEUNG BEOM;HAN, JEON GUK;KIM, SEONG GYUN;KANG, SUNG TAEG;PARK, SUNG WOO;KANG, SANG WOO;SEO, BO YOUNG