发明名称 |
Bit switch voltage drop compensation during programming in nonvolatile memory |
摘要 |
A method is provided of regulating a supply voltage for providing a bit line voltage in a semiconductor memory device where the bit line voltage is provided to memory cells in a bit line from the supply voltage through a bit switch. A bit line current provided to the memory cells is detected. The supply voltage is adjusted responsive to the deducted bit line current to at least partially compensate for a voltage drop across the bit switch where the voltage drop is dependent at least in part on the bit line current.
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申请公布号 |
US7009882(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20040792120 |
申请日期 |
2004.03.03 |
申请人 |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY, INC. |
发明人 |
CHEN CHUNG ZEN |
分类号 |
G11C16/04;G11C11/22 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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