发明名称 |
Conductive memory stack with non-uniform width |
摘要 |
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.
|
申请公布号 |
US7009235(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20030605963 |
申请日期 |
2003.11.10 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;LONGCOR STEVEN W.;CHEVALLIER CHRISTOPHE J. |
分类号 |
H01L27/108;G11C11/56;G11C13/00;H01L21/8246;H01L27/115;H01L41/24 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|