发明名称 |
Indirect switching and sensing of phase change memory cells |
摘要 |
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.
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申请公布号 |
US7009694(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20040856547 |
申请日期 |
2004.05.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HART MARK W.;LAM CHUNG H.;MARRIAN CHRISTIE R. K.;MCCLELLAND GARY M.;RAOUX SIMONE;RETTNER CHARLES T.;WICKRAMASINGHE HEMANTHA K. |
分类号 |
G11C11/00;G11C16/02;H01L27/24 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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