发明名称 |
Epitaxial growth of germanium photodetector for CMOS imagers |
摘要 |
A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the silicon nitride layer; patterning and etching the germanium layer wherein a portion of the germanium layer is in direct physical contact with the silicon substrate; depositing a layer of silicon oxide on the germanium layer wherein the germanium layer is encapsulated by the silicon oxide layer; annealing the structure at a temperature wherein the germanium melts and the other layers remain solid; growing a second, single-crystal layer of germanium on the structure by liquid phase epitaxy; selectively removing the silicon oxide layer; and completing the germanium photodetector.
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申请公布号 |
US7008813(B1) |
申请公布日期 |
2006.03.07 |
申请号 |
US20050069424 |
申请日期 |
2005.02.28 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC.. |
发明人 |
LEE JONG-JAN;MAA JER-SHEN;TWEET DOUGLAS J.;HSU SHENG TENG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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