Substrate manufacturing method

摘要

This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer ( 12 ) is formed on a single-crystal Si substrate ( 11 ). Ions are implanted into the substrate ( 11 ) through the insulating layer ( 12 ) to form an ion-implanted layer ( 13 ). The insulating layer ( 12 ) is thinned down to form a thin insulating layer ( 12 a). A thus prepared first substrate is placed on a second substrate ( 20 ) to form a bonded substrate stack ( 30 ). After that, the bonded substrate stack ( 30 ) is split at the ion-implanted layer ( 13 ).