发明名称 Transferring semiconductor crystal from a substrate to a resin
摘要 A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.
申请公布号 US7009220(B2) 申请公布日期 2006.03.07
申请号 US20050100213 申请日期 2005.04.06
申请人 SONY CORPORATION 发明人 OOHATA TOYOHARU
分类号 H01L21/60;H01L25/075;H01L33/54;H01L33/62;H01S5/02;H01S5/042;H01S5/183 主分类号 H01L21/60
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