| 摘要 |
A bridge phenomenon between metal wirings is prevented by removing metal by-products created during a metal wiring etching process. A semiconductor substrate is formed with an insulation layer having a conductive plug. A metal layer including first Ti/TiN layer, an Al layer, and a second Ti/TiN layer is formed on an entire surface of the semiconductor substrate. A hard mask layer is formed on the metal layer. A photosensitive film pattern is formed the hard mask layer and the hard mask layer is primarily etched by using the photosensitive film pattern as a mask. The metal layer is etched by using the photosensitive film pattern and the etched hard mask layer as an etching mask.
|
