METAL WIRE FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method of forming metal wiring of semiconductor device comprises the steps of: defining a metal wiring region by photo masking after forming an insulating film(1) on a semiconductor substrate(7) and depositing photoresist(5); dry etching of the insulating film(1) using the photoresist(5) as mask; and forming a metal wiring by removing the remained photoresist after depositing a first metal(2) and a second metal(3) by sputtering.