发明名称 |
Method for forming a planarized layer of a semiconductor device |
摘要 |
In a method for forming a planarized layer on a semiconductor device having concave and convex structures, a dielectric film is formed on a semiconductor substrate; a photoresist pattern is formed to have a thickness on a portion of the dielectric film other than a convex portion greater than h/n (h and n are real numbers of one or more) to remove the convex portion of the dielectric film by a depth of approximately h. The photoresist pattern is re-flowed to have a thickness below h/n at a portion from an edge of the convex portion to a slant portion of the dielectric film. The dielectric film is etched using an etchant having a selectivity of 1:n between the photoresist pattern and the dielectric film. An edge of the photoresist pattern is made thin by re-flowing thereby minimizing a pillar, hence allowing simple, fast, planarization of the dielectric film.
|
申请公布号 |
US7008755(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20030464645 |
申请日期 |
2003.06.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-JONG;HWANG IN-SEAK;KIM TAE-WON |
分类号 |
G03F7/00;G03F7/16;G03F7/20;G03F7/36;G03F7/40;H01L21/027;H01L21/3105;H01L21/311;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
G03F7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|