发明名称 |
Electrostatic discharge protection device for integrated circuits |
摘要 |
A protection device for integrated circuits. A complementary well is fabricated in a semiconductor substrate. An enhancement mode junction field effect transistor (JFET) is fabricated in the complementary well. An interface bonding pad is fabricated above the JFET. A source contact is also fabricated in the well. The gate and drain of the JFET are coupled to the interface bonding pad and the source of the JFET is coupled to the substrate.
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申请公布号 |
US7009229(B1) |
申请公布日期 |
2006.03.07 |
申请号 |
US20040793077 |
申请日期 |
2004.03.03 |
申请人 |
LOVOLTECH, INCORPORATED |
发明人 |
LIN CHONG MING;YU HO YUAN |
分类号 |
H01L29/80;H01L27/02;H01L29/10;H01L29/808;H01L31/112 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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